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FLL21E060IY
L,S-band High Power GaAs FET
FEATURES
High Voltage Operation (VDS=28V) GaAs FET High Gain: 15.5dB(typ.) at Pout=41.8dBm(Avg.) Broad Frequency Range : 2110 to 2170MHz High Reliability
DESCRIPTION
The FLL21E060IY is a high power GaAs FET that offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers. This device is targeted for high voltage, low current operation in digitally modulated base station amplifiers. This product is ideally suited for W-CDMA and Multi-carrier PCS base station amplifiers while offering high gain, long term reliability and ease of use.
ABSOLUTE MAXIMUM RATING Item
Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature
Symbol
VDS VGS PT T stg T ch
Condition TC=25 C
(Case Tem perature)
o
Rating 32 -3 102 65 to +175 200
o
Unit
V V W o C o C
-
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25 C) Item
DC Input Voltage Forward Gate Current Reverse Gate Current Channel Temperature
Symbol
VDS IGF IGR T ch
Condition
RG=2 RG=2
Limit <28 <113.6 >-22.1 155
Unit
V mA mA o C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 C) Item
Pinch-Off Voltage Gate-Source Breakdown Voltage 3rd Order Intermodulation Distortion Power Gain Drain Efficiency Adjacent Channel Leakage Power Ratio Themal Resistance
Note 1 : IM3, ACLR and Gain test conditions as follows
IM3 & Gain : f 0=2.1325GHz, f 1=2.1475GHz W-CDMA(3GPP3.4 12-0) BS-1 64ch non clipping modulation measured over 3.84MHz at f 0-15MHz and f 1+15MHz. ACLR : f 0=2.1325GHz W-CDMA (3GPP3.4 12-00) BS-1 64ch non clipping modulation, measured over 3.84MHz at f 0+/-5MHz
o
Symbol
VP VGSO IM 3 GP D ACLR Rth
Condition
VDS=5V IDS=94.3mA IGS=-943uA VDS=28V IDS(DC)=630mA Pout=41.8dBm(Avg.)
Note 1
Limit
Min. -0.1 -5 14.5 Typ. -0.2 -33 15.5 26 -35 1.5 Max. -0.5 -31 1.7
Unit
V V dBc dB %
o
Channel to Case
dBc C/W
ESD
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k )
CLASS III
2000V ~
CASE STYLE : IY
Edition 1.1 June 2004
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FLL21E060IY
L,S-band High Power GaAs FET
Output Power vs. Frequency VDS=28V, IDS=630mA
50 48 46 44 42 40 38 36 34 32 30 28 26 2.04 2.06 2.08
50 48 46
Output Power & Drain Efficiency vs. Input Power VDS=28V, IDS=630mA, f=2.14GHz
100 90
Output Power [dBm]
P out
80
Output Power[dBm]
42 40 38 36 34 32 30 15 17 19 21 23 25 27 29 31 33 35 37 Input Pow er[dBm ]
60 50 40
d
30 20 10 0
2.1
2.12 2.14 2.16 2.18
2.2
Frequency [GHz] Pin=15dBm Pin=30dBm Pin=20dBm Pin=35dBm Pin=25dBm
Two-Carrier IMD(ACLR) vs. Output Power VDS=28V IDS=630mA f0=2.135, f1=2.145GHz W-CDMA 3-GPP BS-1 64ch Modulation
Single-Carrier ACLR vs. Output Power VDS=28V IDS=630mA fo=2.1325GHz W-CDMA 3GPP BS-1 64ch Modulation
-25 -30 -35
IMD[dBc]
35
Drain Efficiency[%]
-30 -35
35
ACLR[dBc]
25 20 15 10 5 0 24 26 28 30 32 34 36 38 40 42 44 46 48 Output Power[dBm] IM3L IM5L Drain Efficiency
-40 -45 -50 -55 -60 -65 24 26 28 30 32 34 36 38 40 42 44 46 48 Output Power[dBm] +/-5MHz +/-10MHz
25 20 15 10 5 0
-40 -45 -50 -55 -60
Drain Efficiency
2
Drain Efficiency[%]
30
30
Drain Efficiency[%]
44
70
FLL21E060IY
L,S-band High Power GaAs FET
Board Layout
VGS
C15 C14 C13
C12
C11
C18 C17 C16
R2 C19
VDS
R1
C1
C3
C4
C5
C6 L1 C9
C7 C10x5
C8
C2
Circuit Diagram of the Board C15C14C13C12 C11
r=3.5 t=0.8mm
C16C17C18C19
R2 Z7 R1 Z9 Z8 Z6 Z10 L1 C6 C7C8 Z11 C2 Z12
Z1 C1
Z2
Z3 C3
Z4 C4
Z5
C9 C10x5
C5
Z1, Z12 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11
9.00mm x 1.78mm Transmission Line 16.3mm x 1.78mm Transmission Line 7.00mm x 1.78mm Transmission Line 6.00mm x 13.0mm Transmission Line 3.50mm x 0.50mm Transmission Line 6.00mm x 13.0mm Transmission Line 23.0mm x 0.50mm Transmission Line 6.00mm x 25.0mm Transmission Line 23.0mm x 1.50mm Transmission Line 9.50mm x 13.0mm Transmission Line 23.3mm x 1.78mm Transmission Line
C1,C2 C3,C7 C4,C6 C5,C9 C8 C10 C11,C16 C12,C17 C13,C18 C14,C15 3
10pF 1.0pF 0.75pF 1.5pF 0.5pF 0.1uF 20pF 100nF 1000pF 10uF
C18 L1 R1 R2
22uF 3.3nF 2.0ohm 51ohm
Board input size r=3.5 t=0.8mm 50mm x 50mm output size r=3.5 t=0.8mm 50mm x 50mm
FLL21E060IY
L,S-band High Power GaAs FET
S-Parameters @ VDS=28V, IDS=630mA, f=1.0 to 3.0 GHz
+50j +25j
2. 1
10 25
+100j
[GHz]
+250j
+10j
2. H z 0G
0
2. H z 0G
2. 1
-10j
2. 2 2. 2
-250j
-25j -50j
-100j
S 11 S 22
+90
2.2
180 8
4 Scale for |S21|
2.1
2.2 2.0GHz 2.1
0
2.0GHz
0.2
0.4 -90
Scale for |S 12|
1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.11 2.12 2.13 2.14 2.15 2.16 2.17 2.18 2.19 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3
S11(mag) S11(ang) S21(mag) S21(ang) S12(mag) S12(ang) S22(mag) S22(ang) 0.961 -176.42 0.480 4.24 0.002 70.01 0.933 -173.72 0.957 -176.29 0.468 -0.94 0.003 71.76 0.935 -174.51 0.953 -176.44 0.479 -5.13 0.003 69.92 0.930 -175.43 0.949 -176.61 0.512 -10.30 0.005 75.49 0.932 -176.11 0.943 -177.14 0.571 -16.29 0.005 71.35 0.928 -177.11 0.933 -178.20 0.665 -22.90 0.007 66.87 0.915 -177.79 0.911 -179.23 0.830 -31.26 0.009 58.53 0.908 -179.13 0.881 179.01 1.091 -42.42 0.011 49.89 0.885 178.94 0.833 177.08 1.532 -57.22 0.015 36.71 0.850 177.15 0.749 174.48 2.331 -78.13 0.022 17.53 0.829 173.66 0.609 171.95 3.889 -108.90 0.034 -13.62 0.815 163.99 0.263 -172.76 6.931 -165.59 0.052 -71.77 0.654 113.03 0.242 -156.52 7.194 -174.60 0.053 -80.54 0.599 100.93 0.252 -140.46 7.389 176.42 0.053 -89.96 0.541 86.80 0.306 -126.52 7.360 166.64 0.052 -99.95 0.478 69.57 0.378 -120.67 7.291 156.88 0.051 -110.43 0.419 48.81 0.457 -119.30 7.041 146.98 0.048 -119.43 0.382 25.67 0.531 -120.31 6.706 137.94 0.044 -129.46 0.373 1.34 0.596 -122.55 6.274 129.48 0.041 -137.37 0.388 -20.78 0.645 -124.52 5.836 121.87 0.037 -146.92 0.421 -39.36 0.696 -127.28 5.392 114.90 0.035 -152.94 0.461 -53.66 0.730 -130.24 4.968 108.68 0.030 -159.30 0.503 -65.54 0.859 -143.77 2.285 69.86 0.012 156.65 0.754 -113.65 0.894 -148.81 1.271 50.96 0.006 130.95 0.838 -127.60 0.916 -151.41 0.835 38.99 0.002 108.48 0.884 -134.62 0.923 -153.20 0.595 29.68 0.001 102.28 0.905 -138.74 0.927 -154.54 0.459 22.97 0.001 157.08 0.918 -141.00 0.936 -155.53 0.384 16.60 0.002 118.47 0.925 -143.07 0.932 -157.09 0.332 11.02 0.003 119.75 0.925 -145.09 0.928 -158.33 0.311 6.31 0.003 121.74 0.918 -146.72
S 12 S 21
4
FLL21E060IY
L,S-band High Power GaAs FET
IY Package Outline
9.98 R1.524 4.826
3.251
9.779
4.826
12.7 29.50 34.036
0.152 1.575
Unit : mm
5
FLL21E060IY
L,S-band High Power GaAs FET
For further information please contact :
CAUTION
Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1101,Ocean Centre, 5 Canton Road Tsim Sha Tsui, Kowloon, Hong kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) TEL +81-55-275-4411 FAX +81-55-275-9461
Sales Division 1, Kanai-cho, Sakae-ku Yokohama,244-0845,Japan
Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not put these products into the mouth. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others.
(c) 2004 Eudyna Devices USA Inc. Printed in U.S.A.
TEL +81-45-853-8156 FAX +81-45-853-8170
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